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課程名稱 |
半導體元件物理
Physics of Semiconductor Devices |
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開課學期 |
104-1 |
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授課對象 |
電機資訊學院 電子工程學研究所 |
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授課教師 |
李峻霣 |
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課號 |
EE5113 |
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課程識別碼 |
921 U7110 |
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班次 |
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學分 |
3 |
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全/半年 |
半年 |
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必/選修 |
選修 |
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上課時間 |
星期四7,8,9(14:20~17:20) |
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上課地點 |
博理114 |
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備註 |
奈米電子組碩士生在學期間三選一必修核心課程之一。
總人數上限：50人 |
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Ceiba 課程網頁 |
http://ceiba.ntu.edu.tw/1041EE5113_ |
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課程簡介影片 |
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核心能力關聯 |
本課程尚未建立核心能力關連 |
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課程大綱
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為確保您我的權利,請尊重智慧財產權及不得非法影印
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課程概述 |
1. Fundamentals of semiconductor physics and carrier transport
2. Physics in metal-semiconductor junctions and semiconductor pn junctions and their applications
3. MOS capacitor
4. Physics of MOSFETs and advanced topics (TFETs, Nanowire and FinFETs)
5. Bipolar junction transistors |
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課程目標 |
1. To understand the fundamentals of semiconductor physics
2. To understand physics of basic units of semiconductor devices (metal-semiconductor junctions and pn junctions)
3. To understand the properties of MOS capacitors
4. To understand physics of MOSFETs and state-of-the-art device structures
5. To understand the fundamentals of bipolar junction transistors |
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課程要求 |
待補 |
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預期每週課後學習時數 |
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Office Hours |
每週四 11:00~12:00 備註： 請email來約 |
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指定閱讀 |
1. Device Electronics for Integrated Circuits, Richard S. Muller, Theodore I. Kamins, and Mansun Chan, 3rd edition, Wiley 2003.
2. Fundamentals of Modern VLSI Devices, Yuan Taur and Tak H. Ning, 2nd edition, Cambridge 2009.
3. Physics of Semiconductor Devices, S. M. Sze and Kwok K. Ng, 3rd edition, Wiley 2007. (free electronic version is available at NTU Library link) |
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參考書目 |
1. Semiconductor Material and Device Characterization, Dieter K. Schroder, 3rd edition, Wiley 200
2. Solid State Electronic Devices, Ben Streetman and Sanjay Banerjee, 5th edition (or beyond), Pearson 2000.
3. Modern Semiconductor Devices for Integrated Circuits, Chenming Calvin Hu, Pearson 2010. (free online resource at: http://www.eecs.berkeley.edu/~hu/Book-5. Chapters-and-Lecture-Slides-download.html)
4. Semiconductor Physics and Devices: Basic Principles, Donald Neamen, 4th edition, McGraw-Hill 2012. |
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評量方式
(僅供參考) |
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No. |
項目 |
百分比 |
說明 |
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1. |
Homework (total 5) |
25% |
Due in two weeks (generally) |
2. |
Mid-term |
40% |
Format: open book (3 hours)
Coverage: Semiconductor physics, carrier transport, metal/semiconductor junctions, pn junctions, and bipolar junction transistors |
3. |
Final |
35% |
Format: oral, 45 minutes
Coverage: MOS capacitor, MOSFETs, and the advanced topics in MOSFETs |
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週次 |
日期 |
單元主題 |
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第1週 |
09/17 |
Review of semiconductor physics |
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第2週 |
09/24 |
Review of semiconductor physics |
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第3週 |
10/01 |
Carrie transport |
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第4週 |
10/08 |
Carrier transport/Metal-semiconductor and pn junctions |
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第5週 |
10/15 |
HW 1 due, Metal-semiconductor junctions |
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第6週 |
10/22 |
Metal-semiconductor junctions |
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第7週 |
10/29 |
pn junctions |
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第8週 |
11/05 |
HW 2 due, pn junctions |
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第9週 |
11/12 |
pn junctions |
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第10週 |
11/19 |
HW 3 due, pn junctions |
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第11週 |
11/26 |
pn junctions/bipolar junction transistors |
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第12週 |
12/03 |
Midterm (all but NOT including BJT) |
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第13週 |
12/10 |
MOS capacitors |
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第14週 |
12/17 |
MOS capacitors |
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第15週 |
12/24 |
MOS capacitors |
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第16週 |
12/31 |
MOSFETs |
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第17週 |
01/07 |
HW 4 due, MOSFETs |
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第18週 |
01/14 |
MOSFETs |
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第19週 |
01/20 (Wednesday) |
Oral exam (each person 40 minutes) from 9 am ~ 1 pm and 2 pm ~ 6 pm |
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